( en | de | ru )

 

Disambiguation of "Ball, Dennis R."

Author of the publication

copydeleteadd this publication to your clipboard
Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFET.

, , , , , , , and . IRPS, page 10. IEEE, (2024)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Dennis R Enning

Hans Ball

Reinhard Ball

Helmut Ball

Andreas Ball

 

Other publications of authors with the same name

Multi-cell soft errors at the 16-nm FinFET technology node., , , , , , and . IRPS, page 4. IEEE, (2015)Multiple Bit Upsets in Register Circuits at the 5-nm Bulk FinFET Node., , , , , and . IRPS, page 46. IEEE, (2024)Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node., , , , and . IRPS, page 1-6. IEEE, (2023)Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment., , , , , , , , , and 1 other author(s). IRPS, page 7. IEEE, (2022)Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology., , , , and . IRPS, page 1-6. IEEE, (2023)High-Current State triggered by Operating-Frequency Change., , , , , , and . IRPS, page 1-4. IEEE, (2020)Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply Voltages., , , , and . IRPS, page 1-5. IEEE, (2024)Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFET., , , , , , , and . IRPS, page 10. IEEE, (2024)Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET., , , , , and . IRPS, page 1-5. IEEE, (2021)Single-Event Latchup Vulnerability at the 7-nm FinFET Node., , , , and . IRPS, page 5. IEEE, (2022)