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Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.

Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G. Groeseneken, D. Linten, T. Grasser, and B. Kaczer. IRPS, page 1-7. IEEE, (2019)

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Klaus Tiborski

Laszlo Tibor

Reinhard Gräßer

Fritz Gräßer

Renate Grasser

Other publications of authors with the same name

A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.K. Rupp, A. Jüngel, and T. Grasser. Facing the Multicore-Challenge, volume 7174 of Lecture Notes in Computer Science, page 147-157. Springer, (2011)NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, and G. Groeseneken. IRPS, page 2. IEEE, (2015)Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.S. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, and T. Grasser. Microelectron. Reliab., 49 (9-11): 998-1002 (2009)Editorial.T. Grasser, and S. Selberherr. Microelectron. Reliab., 47 (6): 839-840 (2007)Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.M. Feil, H. Reisinger, A. Kabakow, T. Aichinger, W. Gustin, and T. Grasser. IRPS, page 3. IEEE, (2022)Characterization and modeling of reliability issues in nanoscale devices.G. Rzepa, W. Goes, B. Kaczer, and T. Grasser. ISCAS, page 2445-2448. IEEE, (2015)Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.B. O'Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim and 6 other author(s). IRPS, page 1-8. IEEE, (2019)Neural Network with Optical Frequency-Coded ReLU.M. Stephanie, L. Pham, A. Schindler, M. Waltl, T. Grasser, and B. Schrenk. OFC, page 1-3. IEEE, (2024)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Östling, T. Mueller, M. Lemme, and T. Grasser. IRPS, page 2. IEEE, (2015)Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.G. Pobegen, T. Aichinger, T. Grasser, and M. Nelhiebel. Microelectron. Reliab., 51 (9-11): 1530-1534 (2011)

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Disambiguation of "Grasser, Tibor"

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URL
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Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.

Please choose a person to relate this publication to

Klaus Tiborski

Laszlo Tibor

Reinhard Gräßer

Fritz Gräßer

Renate Grasser

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Grasser, Tibor"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.

Please choose a person to relate this publication to

Klaus Tiborski

Laszlo Tibor

Reinhard Gräßer

Fritz Gräßer

Renate Grasser

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.