( en | de | ru )

 

Disambiguation of "Makarov, Alexander"

Author of the publication

copydeleteadd this publication to your clipboard
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.

, , , , , , , , , , and . ESSDERC, page 262-265. IEEE, (2019)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Denys Makarov

Roman Makarov

Ivan Makarov

Alexander

Alexander Stadler

Messtechnische Bestimmung und Simulation der Kernverluste in weichmagnetischen Materialien. Uni Erlangen-Nürnberg, (2009)
 

Other publications of authors with the same name

The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register., , , and . ESSDERC, page 311-314. IEEE, (2016)Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins., , , and . LSSC, volume 7116 of Lecture Notes in Computer Science, page 630-637. Springer, (2011)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors., , , , , , , , and . IRPS, page 11. IEEE, (2022)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2019)Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM., , , , , , and . ESSDERC, page 146-149. IEEE, (2019)Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations., , and . NMA, volume 6046 of Lecture Notes in Computer Science, page 87-94. Springer, (2010)