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First demonstration of Ge waveguide platform on Ge-on-insulator for mid-infrared integrated photonics., , and . ECOC, page 1-3. IEEE, (2015)Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks., , , and . IRPS, page 1-4. IEEE, (2021)Thin germanium dioxide film with a high quality interface formed in a direct neutral beam oxidation process., , , and . ESSDERC, page 85-88. IEEE, (2012)III-V-based low power CMOS devices on Si platform., , , , , , , , , and 1 other author(s). ICICDT, page 1-4. IEEE, (2017)SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe., , , , and . OFC, page 1-3. IEEE, (2015)Efficient Optical Modulator by Reverse-Biased III-V/Si Hybrid MOS Capacitor Based on FK Effect and Carrier Depletion., , , and . OFC, page 1-3. IEEE, (2019)Reservoir computing utilizing ferroelectric-gate-insulator FETs and capacitors.. ICICDT, page xv. IEEE, (2023)Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers., , , , , and . 3DIC, page 1-2. IEEE, (2019)Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)., , , , , , , , and . IRPS, page 1-6. IEEE, (2024)Symmetry-preserving enforcement of low-dissipation method based on boundary variation diminishing principle., , and . CoRR, (2021)