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Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM.

J. Lee, H. Jeong, Y. Yang, J. Kim, and S. Jung. ISOCC, page 479-482. IEEE, (2012)

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Su-Jeong Jeong

Wonrae Jeong

Hyung-Gon Jeong

Chang-Kyo Jeong

Hang-Kyun Jeong

Other publications of authors with the same name

Bitline Charge-Recycling SRAM Write Assist Circuitry for $V_MIN$ Improvement and Energy Saving.H. Jeong, S. Oh, T. Oh, H. Kim, C. Park, W. Rim, T. Song, and S. Jung. IEEE J. Solid State Circuits, 54 (3): 896-906 (2019)Power-Gated 9T SRAM Cell for Low-Energy Operation.T. Oh, H. Jeong, K. Kang, J. Park, Y. Yang, and S. Jung. IEEE Trans. Very Large Scale Integr. Syst., 25 (3): 1183-1187 (2017)Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter.T. Na, H. Jeong, S. Jung, J. Kim, and S. Kang. ICECS, page 400-403. IEEE, (2015)Self-Shut-Off Pulsed Latches for Minimizing Sequencing Overhead.H. Park, and H. Jeong. IEEE Trans. Very Large Scale Integr. Syst., 30 (11): 1728-1738 (2022)Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM.J. Lee, H. Jeong, Y. Yang, J. Kim, and S. Jung. ISOCC, page 479-482. IEEE, (2012)Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits.H. Jeong, Y. Yang, J. Lee, J. Kim, and S. Jung. ICECS, page 833-836. IEEE, (2012)A Voltage and Temperature Tracking SRAM Assist Supporting 740mV Dual-Rail Offset for Low-Power and High-Performance Applications in 7nm EUV FinFET Technology.I. Lee, H. Jeong, S. Baeck, S. Gupta, C. Park, D. Seo, J. Choi, J. Kim, H. Kim, J. Kang and 9 other author(s). ISSCC, page 392-394. IEEE, (2019)Bitline Precharging and Preamplifying Switching pMOS for High-Speed Low-Power SRAM.H. Jeong, J. Park, T. Oh, W. Rim, T. Song, G. Kim, H. Won, and S. Jung. IEEE Trans. Circuits Syst. II Express Briefs, 63-II (11): 1059-1063 (2016)Pseudo NMOS based sense amplifier for high speed single-ended SRAM.H. Jeong, T. Kim, S. Jung, T. Song, and G. Kim. ICECS, page 331-334. IEEE, (2014)Bayesian Learning Automated SRAM Circuit Design for Power and Performance Optimization.J. Lee, J. Park, S. Kim, and H. Jeong. IEEE Trans. Circuits Syst. I Regul. Pap., 70 (12): 4949-4961 (December 2023)

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Disambiguation of "Jeong, Hanwool"

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Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM.

Please choose a person to relate this publication to

Su-Jeong Jeong

Wonrae Jeong

Hyung-Gon Jeong

Chang-Kyo Jeong

Hang-Kyun Jeong

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Jeong, Hanwool"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM.

Please choose a person to relate this publication to

Su-Jeong Jeong

Wonrae Jeong

Hyung-Gon Jeong

Chang-Kyo Jeong

Hang-Kyun Jeong

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM.