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Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature., , , , , , , and . IEEE Access, (2020)An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs., , , , , , and . IEEE Access, (2022)Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs., , , , , , , , and . IRPS, page 1. IEEE, (2018)Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light., , , , , , , , and . Sci. China Inf. Sci., (February 2023)Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method., , , , , , , , , and . Sci. China Inf. Sci., (2022)Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress., , , , , , and . Microelectron. Reliab., 54 (6-7): 1293-1298 (2014)Nodes Location Method Based on Correlation Analysis in WSN., , , and . IIH-MSP, page 448-451. IEEE, (2013)Combining Remote Sensing and Meteorological Data for Improved Rice Plant Potassium Content Estimation., , , , , , , , , and . Remote. Sens., 13 (17): 3502 (2021)Using Dual Spatial Clustering Models for Urban Fringe Areas Extraction Based on Night-time Light Data: Comparison of NPP/VIIRS, Luojia 1-01, and NASA's Black Marble., , , , , and . ISPRS Int. J. Geo Inf., 12 (10): 408 (October 2023)Dense representative tooth landmark/axis detection network on 3D model., , , , , , , and . Comput. Aided Geom. Des., (2022)