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Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology., , , , , , , and . Microelectron. Reliab., (2018)New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis., , , , , , , , , and 1 other author(s). IRPS, page 1-9. IEEE, (2019)Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , and 1 other author(s). IRPS, page 1-10. IEEE, (2020)Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress., , , , , , , and . IRPS, page 1-7. IEEE, (2021)Physical failure analysis methods for wide band gap semiconductor devices., , , and . IRPS, page 3. IEEE, (2018)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , and . Microelectron. Reliab., (2017)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures., , , and . Microelectron. Reliab., 54 (9-10): 1785-1789 (2014)