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Integration of Damage-less Probe Cards Using Nano-TSV Technology for Microbumped Wafer Testing., , , , , , , , , и . 3DIC, стр. 1-4. IEEE, (2021)Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV., , , , , , , и . 3DIC, стр. 1-4. IEEE, (2014)Micro-XRD investigation of fine-pitch Cu-TSV induced thermo-mechanical stress in high-density 3D-LSI., , , , , , , и . 3DIC, стр. 1-4. IEEE, (2014)W/Cu TSVs for 3D-LSI with minimum thermo-mechanical stress., , , , , и . 3DIC, стр. 1-4. IEEE, (2011)New concept of TSV formation methodology using Directed Self-Assembly (DSA)., , , , , , , и . 3DIC, стр. 1-4. IEEE, (2016)Mitigating thermo mechanical stress in high-density 3D-LSI through dielectric liners in Cu- through silicon Via _ µ-RS and µ-XRD study., , , , , , и . 3DIC, стр. TS8.10.1-TS8.10.5. IEEE, (2015)Transfer and non-transfer stacking technologies based on chip-to-wafer self-asembly for high-throughput and high-precision alignment and microbump bonding., , , , , , , , , и 2 other автор(ы). 3DIC, стр. TS7.4.1-TS7.4.4. IEEE, (2015)Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSix for via-last TSV technology., , , , , и . 3DIC, стр. 1-4. IEEE, (2016)Impacts of Deposition Temperature and Annealing Condition on Ozone-Ethylene Radical Generation-TEOS-CVD SiO2 for Low-Temperature TSV Liner Formation., , , , , , , и . 3DIC, стр. 1-4. IEEE, (2019)Micro-Raman spectroscopy analysis and capacitance - time (C-t) measurement of thinned silicon substrates for 3D integration., , , , , , , , и . 3DIC, стр. 1-5. IEEE, (2009)