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A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability., and . IRPS, page 1-6. IEEE, (2019)Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions., , , , , , , , , and . IRPS, page 1-4. IEEE, (2020)Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors., , , , , , , and . IRPS, page 1-6. IEEE, (2019)$R_ON$ and $V_TH$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout., , , , , , , , and . IRPS, page 1-4. IEEE, (2024)µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate., , , , , , , , and . IRPS, page 1-6. IEEE, (2019)Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature., , , , , , , , and . IRPS, page 5. IEEE, (2022)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs., , , , , , , and . IRPS, page 4. IEEE, (2018)Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , and . ESSDERC, page 130-133. IEEE, (2017)