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Disambiguation of "Meneghini, Matteo"

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$R_ON$ and $V_TH$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout.

, , , , , , , , and . IRPS, page 1-4. IEEE, (2024)

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Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Matteo Rini

Marco Matteo

 

Other publications of authors with the same name

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , and . ESSDERC, page 130-133. IEEE, (2017)Modeling challenges for high-efficiency visible light-emitting diodes., , , , , , , , , and 3 other author(s). RTSI, page 157-160. IEEE, (2015)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , and . IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , and . ESSDERC, page 389-392. IEEE, (2014)Current crowding as a major cause for InGaN LED degradation at extreme high current density., , , , , and . IECON, page 1-6. IEEE, (2021)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , and 4 other author(s). IRPS, page 1-2. IEEE, (2021)