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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, and B. Bakeroot. IRPS, page 4. IEEE, (2018)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Marchió

Enrico Mönke

Other publications of authors with the same name

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella. Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, and G. Cellere. IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)Improving the reliability and safety of automotive electronics.E. Zanoni, and P. Pavan. IEEE Micro, 13 (1): 30-48 (1993)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Current crowding as a major cause for InGaN LED degradation at extreme high current density.N. Trivellin, M. Buffolo, C. Santi, E. Zanoni, G. Meneghesso, and M. Meneghini. IECON, page 1-6. IEEE, (2021)Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting.N. Trivellin, M. Meneghini, M. Ferretti, D. Barbisan, M. Lago, G. Meneghesso, and E. Zanoni. RTSI, page 154-156. IEEE, (2015)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.S. Stoffels, N. Posthuma, S. Decoutere, B. Bakeroot, A. Tallarico, E. Sangiorgi, C. Fiegna, J. Zheng, X. Ma, M. Borga and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.F. Chiocchetta, C. Calascione, C. Santi, C. Sharma, F. Rampazzo, X. Zheng, B. Romanczyk, M. Guidry, H. Li, S. Keller and 4 other author(s). IRPS, page 1-2. IEEE, (2021)Degradation of vertical GaN FETs under gate and drain stress.M. Ruzzarin, M. Meneghini, C. Santi, G. Meneghesso, E. Zanoni, M. Sun, and T. Palacios. IRPS, page 4. IEEE, (2018)

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Disambiguation of "Zanoni, Enrico"

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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Marchió

Enrico Mönke

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zanoni, Enrico"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Marchió

Enrico Mönke

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.