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Effects of constant voltage stress on organic complementary logic inverters., , , , , , , и . ESSDERC, стр. 298-301. IEEE, (2014)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2021)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , и . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , и . IRPS, стр. 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)Backside Failure Analysis of GaAs ICs after ESD tests., , , , и . Microelectron. Reliab., 42 (9-11): 1293-1298 (2002)Long-term stresses on linear micromirrors for pico projector application., , , , , , и . Microelectron. Reliab., (2017)Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test., , , , , и . Microelectron. Reliab., 51 (9-11): 1887-1891 (2011)Current crowding as a major cause for InGaN LED degradation at extreme high current density., , , , , и . IECON, стр. 1-6. IEEE, (2021)