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Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.

, , , , and . ESSDERC, page 270-273. IEEE, (2012)

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Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis., , , and . Microelectron. Reliab., (2017)On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise., , , , and . Microelectron. Reliab., 44 (9-11): 1387-1392 (2004)Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress., , , , , , and . Microelectron. Reliab., (2016)Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1520-1522 (2010)Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , and . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes., , , , , , and . Microelectron. Reliab., 55 (9-10): 1741-1745 (2015)Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements., , , , and . ESSDERC, page 270-273. IEEE, (2012)Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications., , , , , and . IRPS, page 1-5. IEEE, (2023)Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors., , , , and . IRPS, page 4. IEEE, (2018)