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Disambiguation of "Iwai, Hiroshi"

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Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions.

, , , , , , , , and . Microelectron. Reliab., 53 (5): 665-669 (2013)

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Heinz Iwainsky

Tohru Iwai

Masayasu Iwai

Hiroshi Kawabe

Hiroshi Murata

 

Other publications of authors with the same name

Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress., , , and . Microelectron. Reliab., 45 (9-11): 1365-1369 (2005)Switching of 3300V Scaled IGBT by 5V Gate Drive., , , , , , , , , and 13 other author(s). ASICON, page 1-3. IEEE, (2019)Trend of CMOS downsizing and its reliability., and . Microelectron. Reliab., 42 (9-11): 1251-1258 (2002)Equivalent Noise Temperature Representation for Scaled MOSFETs., , and . IEICE Trans. Electron., 93-C (10): 1550-1552 (2010)Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions., , , , , , , , and . Microelectron. Reliab., 53 (5): 665-669 (2013)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , and . ESSDERC, page 73-76. IEEE, (2012)Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT., , , , , , , , and . ESSDERC, page 107-110. IEEE, (2013)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)Foundries, EDA vendors, and designers: who shoulders the blame when a design doesn't work in the nano-scale and wireless era?, , , , , , , , , and 1 other author(s). CICC, page 618-619. IEEE, (2005)NMOS LSI Development from 1970's to the beginning of 1980's.. ASICON, page 1-4. IEEE, (2021)