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A 28.6dBm 65nm Class-E PA with Envelope Restoration by Pulse-Width and Pulse-Position Modulation.

, , , , , , and . ISSCC, page 566-567. IEEE, (2008)

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A Flip-Chip-Packaged 25.3 dBm Class-D Outphasing Power Amplifier in 32 nm CMOS for WLAN Application., , , , , and . IEEE J. Solid State Circuits, 46 (7): 1596-1605 (2011)A 64 GHz LNA With 15.5 dB Gain and 6.5 dB NF in 90 nm CMOS., , and . IEEE J. Solid State Circuits, 43 (7): 1542-1552 (2008)A 28.6dBm 65nm Class-E PA with Envelope Restoration by Pulse-Width and Pulse-Position Modulation., , , , , , and . ISSCC, page 566-567. IEEE, (2008)A 5GHz 108Mb/s 2x2 MIMO Transceiver with Fully Integrated +16dBm PAs in 90nm CMOS., , , , , , , , , and 1 other author(s). ISSCC, page 1420-1429. IEEE, (2006)Transformer-Combining Digital PA with Efficiency Peaking at 0, -6, and -12 dB Backoff in 32nm CMOS., , , , , and . ISCAS, page 1-4. IEEE, (2020)Session 15 overview: Mm-Wave and THz techniques: RF subcommittee., and . ISSCC, page 250-251. IEEE, (2012)A mm-wave power harvesting RFID tag in 90nm CMOS., , and . CICC, page 677-680. IEEE, (2009)A 4.75-GHz Fractional Frequency Divider-by-1.25 With TDC-Based All-Digital Spur Calibration in 45-nm CMOS., , and . IEEE J. Solid State Circuits, 44 (12): 3422-3433 (2009)Power-area-DR-frequency-selectivity tradeoffs in weakly nonlinear active filters., and . ISCAS (1), page 453-456. IEEE, (2003)A 2.5GHz, 6.9mW ΔΣ modulator with standard cell design in 45nm-LP CMOS using time-interleaving., , , , , , and . ESSCIRC, page 152-155. IEEE, (2009)