Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks.

T. Hirtzlin, M. Bocquet, J. Klein, E. Nowak, E. Vianello, J. Portal, and D. Querlioz. AICAS, page 288-292. IEEE, (2019)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Etienne Herzog

Etienne Brosse

Etienne Kaboré

Etienne Moussay

Etienne Auger

Other publications of authors with the same name

Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications.G. Sassine, C. Nail, L. Tillie, D. Robayo, A. Levisse, C. Cagli, K. Hajjam, J. Nodin, E. Vianello, M. Bernard and 2 other author(s). IRPS, page 2-1. IEEE, (2018)High speed and high-area efficiency non-volatile look-up table design based on magnetic tunnel junction.R. Alhalabi, G. di Pendina, I. Prejbeanu, and E. Nowak. NVMTS, page 1-4. IEEE, (2017)Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse.A. Laborieux, M. Bocquet, T. Hirtzlin, J. Klein, L. Diez, E. Nowak, E. Vianello, J. Portal, and D. Querlioz. AICAS, page 136-140. IEEE, (2020)OTS selector devices: Material engineering for switching performance.M. Cyrille, A. Verdy, G. Navarro, G. Bourgeois, J. Garrione, M. Bernard, C. Sabbione, P. Noe, and E. Nowak. ICICDT, page 113-116. IEEE, (2018)Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization.J. Lopez, L. Hudeley, L. Grenouillet, D. Robayo, J. Sandrini, G. Navarro, M. Bernard, C. Carabasse, D. Deleruyelle, N. Castellani and 4 other author(s). IRPS, page 1-6. IEEE, (2021)In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications.B. Penkovsky, M. Bocquet, T. Hirtzlin, J. Klein, E. Nowak, E. Vianello, J. Portal, and D. Querlioz. DATE, page 690-695. IEEE, (2020)High density SOT-MRAM memory array based on a single transistor.R. Alhalabi, E. Nowak, I. Prejbeanu, and G. di Pendina. NVMTS, page 1-3. IEEE, (2018)Insect-Inspired Elementary Motion Detection Embracing Resistive Memory and Spiking Neural Networks.T. Dalgaty, E. Vianello, D. Ly, G. Indiveri, B. Salvo, E. Nowak, and J. Casas. Living Machines, volume 10928 of Lecture Notes in Computer Science, page 115-128. Springer, (2018)Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance.A. Verdy, G. Navarro, M. Bernard, S. Chevalliez, N. Castellani, E. Nolot, J. Garrione, P. Noe, G. Bourgeois, V. Sousa and 2 other author(s). IRPS, page 6. IEEE, (2018)MRAM: from STT to SOT, for security and memory.M. Kharbouche-Harrari, R. Alhalabi, J. Postel-Pellerin, R. Wacquez, D. Aboulkassimi, E. Nowak, I. Prejbeanu, G. Prenat, and G. di Pendina. DCIS, page 1-6. IEEE, (2018)

BibSonomy

Disambiguation of "Nowak, Etienne"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks.

Please choose a person to relate this publication to

Etienne Herzog

Etienne Brosse

Etienne Kaboré

Etienne Moussay

Etienne Auger

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Nowak, Etienne"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks.

Please choose a person to relate this publication to

Etienne Herzog

Etienne Brosse

Etienne Kaboré

Etienne Moussay

Etienne Auger

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks.