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Variability in Resistive Memories., , , , , , , , , and 10 other author(s). Adv. Intell. Syst., (June 2023)Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors., , , , , and . IRPS, page 1-4. IEEE, (2020)A physically based SPICE model for RRAMs including RTN., , , , and . DCIS, page 1-6. IEEE, (2020)Simulation of serial RRAM cell based on a Verilog-A compact model., , , , , , , , and . DCIS, page 1-6. IEEE, (2021)Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates., , , , and . Microelectron. Reliab., 55 (9-10): 1442-1445 (2015)An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance., , , , and . DCIS, page 1-6. IEEE, (2022)Device variability tolerance of a RRAM-based self-organizing neuromorphic system., , , , , , and . IRPS, page 4-1. IEEE, (2018)Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides., , , , , , , and . Microelectron. Reliab., 42 (9-11): 1501-1504 (2002)