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Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions.

, , , , , , , , and . Microelectron. Reliab., 46 (5-6): 702-712 (2006)

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ESD-RF co-design methodology for the state of the art RF-CMOS blocks., , , , , , , , and . Microelectron. Reliab., 45 (2): 255-268 (2005)RF ESD protection strategies - the design and performance trade-off challenges., , , , , , , , , and 5 other author(s). CICC, page 489-496. IEEE, (2005)Low-cost feedback-enabled LNAs in 45nm CMOS., , , , and . ESSCIRC, page 100-103. IEEE, (2009)A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS., , , , , , , , , and . ESSCIRC, page 291-294. IEEE, (2004)A Fully Integrated 7.3 kV HBM ESD-Protected Transformer-Based 4.5-6 GHz CMOS LNA., , , , , and . IEEE J. Solid State Circuits, 44 (2): 344-353 (2009)A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS., , , , , , , , , and . IEEE J. Solid State Circuits, 40 (7): 1434-1442 (2005)Band Relevance Study of SWIR Hyperspectral Imaging for Material Recycling and Reuse., , and . WHISPERS, page 1-5. IEEE, (2023)Transient voltage overshoot in TLP testing - Real or artifact?, , , , , and . Microelectron. Reliab., 47 (7): 1016-1024 (2007)A low-power 57-to-66GHz transceiver in 40nm LP CMOS with -17dB EVM at 7Gb/s., , , , , , , , , and 2 other author(s). ISSCC, page 268-270. IEEE, (2012)50-to-67GHz ESD-protected power amplifiers in digital 45nm LP CMOS., , , , and . ISSCC, page 382-383. IEEE, (2009)