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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks., , , , , , , , , и 5 other автор(ы). Sci. China Inf. Sci., 63 (2): 129403 (2020)Optimization and design of a novel prescaler and its application to GPS receivers., , и . Sci. China Inf. Sci., 54 (9): 1938-1944 (2011)The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology., , , , , , , , и . APCCAS, стр. 532-535. IEEE, (2022)A 95 dB dynamic range automatic gain control circuits and systems for Multi-standard Digital TV tuner., , , и . ISCAS, стр. 2482-2485. IEEE, (2014)Interconnect Delay and Slew Metrics Using the First Three Moments., , , и . ISQED, стр. 598-602. IEEE Computer Society, (2005)Research on the resonant frequency formula of V-shaped cantilevers., , , , и . NEMS, стр. 59-62. IEEE Computer Society, (2009)Worst-Case Crosstalk Noise Analysis Based on Dual-Exponential Noise Metrics., , , и . VLSI Design, стр. 348-353. IEEE Computer Society, (2005)Home-based Detection of Epileptic Seizures Using a Bracelet with Motor Sensors., , , , , , , , и . NER, стр. 854-857. IEEE, (2021)Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer., , , , , , , , , и 4 other автор(ы). Microelectron. Reliab., (2016)An optimization method for conformal shielding., , , , , и . IEICE Electron. Express, 18 (9): 20210022 (2021)