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4-Mb MOSFET-selected phase-change memory experimental chip., , , , , , , , , и 6 other автор(ы). ESSCIRC, стр. 207-210. IEEE, (2004)Design of resistive non-volatile memories for rad-hard applications., , , , и . ISCAS, стр. 1594-1597. IEEE, (2016)A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage., , , , , , , , , и 6 other автор(ы). IEEE J. Solid State Circuits, 44 (1): 217-227 (2009)A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput., , , , , , , , , и 3 other автор(ы). ISSCC, стр. 268-269. IEEE, (2010)Ultra-low voltage VLSIs for energy efficient systems., , , , и . ISSCC, стр. 514-515. IEEE, (2011)A Multi-Level-Cell Bipolar-Selected Phase-Change Memory., , , , , , , , , и 6 other автор(ы). ISSCC, стр. 428-429. IEEE, (2008)SET and RESET pulse characterization in BJT-selected phase-change memories., , , , , , и . ISCAS (2), стр. 1270-1273. IEEE, (2005)