( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Phase change memory for synaptic plasticity application in neuromorphic systems.

, , , , и . IJCNN, стр. 619-624. IEEE, (2011)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Carlos Sousa

Gideon Sousa

Ágabo Borges de Sousa

Valderês Aparecida Sousa

Maria Constança Dias Urbano Sousa

 

Другие публикации лиц с тем же именем

Innovative GeS2/Sb2Te3 based phase change memory for low power applications., , , , , , , , , и 3 other автор(ы). NVMTS, стр. 1-4. IEEE, (2017)Phase change memory for synaptic plasticity application in neuromorphic systems., , , , и . IJCNN, стр. 619-624. IEEE, (2011)Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements., , , , , , , и . IRPS, стр. 1. IEEE, (2015)Phase Change and Magnetic Memories for Solid-State Drive Applications., , , , и . Proc. IEEE, 105 (9): 1790-1811 (2017)Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance., , , , , , , , , и 2 other автор(ы). IRPS, стр. 6. IEEE, (2018)Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption., , , , , , , , , и 9 other автор(ы). ESSDERC, стр. 286-289. IEEE, (2012)Frequency modulation of conductance level in PCM device for neuromorphic applications., , , , , , , , , и . ESSCIRC, стр. 129-132. IEEE, (2022)High temperature reliability of μtrench Phase-Change Memory devices., , , , , , , , , и 1 other автор(ы). Microelectron. Reliab., 52 (9-10): 1928-1931 (2012)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2021)