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Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell., , , , , , , , , and 6 other author(s). CoRR, (2023)High temperature stability embedded ReRAM for 2x nm node and beyond., , , , , , , , , and 9 other author(s). IMW, page 1-4. IEEE, (2022)Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs., , , , , and . ICICDT, page 1-4. IEEE, (2014)CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes., , , , , and . ESSDERC, page 405-408. IEEE, (2014)Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET., , , , , , , , and . ESSDERC, page 209-212. IEEE, (2012)32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit., , , , , , , , , and 4 other author(s). ISCAS, page 1703-1706. IEEE, (2010)Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks., , , , , , , , , and 3 other author(s). ISCAS, page 380-383. IEEE, (2022)Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications., , , , , , , , and . CoRR, (2020)Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration., , , , , , , , , and 2 other author(s). IRPS, page 1-5. IEEE, (2021)Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements., , , , , , , , , and . ESSCIRC, page 125-128. IEEE, (2022)