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High temperature stability embedded ReRAM for 2x nm node and beyond.

G. Molas, G. Piccolboni, A. Bricalli, A. Verdy, I. Naot, Y. Cohen, A. Regev, I. Naveh, D. Deleruyelle, Q. Rafhay, N. Castellani, L. Reganaz, A. Persico, R. Segaud, J. Nodin, V. Meli, S. Martin, F. Andrieu, and L. Grenouillet. IMW, page 1-4. IEEE, (2022)

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Quentin Alamélou

Quentin Monnet

Quentin Bramas

Quentin Reynaud

Quentin Godfroy

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Impact of short-channel effects on velocity overshoot in MOSFET.G. Hiblot, Q. Rafhay, F. Boeuf, and G. Ghibaudo. NEWCAS, page 1-4. IEEE, (2015)Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR.G. Hiblot, Q. Rafhay, L. Gaben, G. Ghibaudo, and F. Boeuf. ESSDERC, page 242-245. IEEE, (2015)High temperature stability embedded ReRAM for 2x nm node and beyond.G. Molas, G. Piccolboni, A. Bricalli, A. Verdy, I. Naot, Y. Cohen, A. Regev, I. Naveh, D. Deleruyelle, Q. Rafhay and 9 other author(s). IMW, page 1-4. IEEE, (2022)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.J. Micout, Q. Rafhay, X. Garros, M. Cassé, J. Coignus, L. Pasini, C. Lu, N. Rambal, C. Fenouillet-Béranger, L. Brunet and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)New parameter extraction method based on split C-V for FDSOI MOSFETs.I. Akkez, A. Cros, C. Fenouillet-Béranger, F. Boeuf, Q. Rafhay, F. Balestra, and G. Ghibaudo. ESSDERC, page 217-220. IEEE, (2012)Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime.G. Hiblot, Q. Rafhay, F. Boeuf, and G. Ghibaudo. ESSDERC, page 286-289. IEEE, (2014)Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability.L. Reganaz, D. Deleruyelle, Q. Rafhay, J. Lopez, N. Castellani, J. Nodin, A. Bricalli, G. Piccolboni, G. Molas, and F. Andrieu. IRPS, page 1-6. IEEE, (2023)Simulation Study of the Origin of Ge High Speed Photodetector Degradation.B. Arunachalam, J. Broquin, Q. Rafhay, D. Roy, and A. Kaminski. IRPS, page 1-4. IEEE, (2021)Characterization and Modelling of High Speed Ge Photodetectors Reliability.F. Sy, Q. Rafhay, J. Poëtte, G. Grosa, C. Besset, G. Beylier, P. Grosse, D. Roy, and J. Broquin. IRPS, page 1-5. IEEE, (2019)

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Disambiguation of "Rafhay, Quentin"

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High temperature stability embedded ReRAM for 2x nm node and beyond.

Please choose a person to relate this publication to

Quentin Alamélou

Quentin Monnet

Quentin Bramas

Quentin Reynaud

Quentin Godfroy

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Rafhay, Quentin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML High temperature stability embedded ReRAM for 2x nm node and beyond.

Please choose a person to relate this publication to

Quentin Alamélou

Quentin Monnet

Quentin Bramas

Quentin Reynaud

Quentin Godfroy

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

High temperature stability embedded ReRAM for 2x nm node and beyond.