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Synchronous full-adder based on complementary resistive switching memory cells., , , , , , , , , and 3 other author(s). NEWCAS, page 1-4. IEEE, (2013)Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2021)1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation., , , , , , , , , and 6 other author(s). MIXDES, page 1-6. IEEE, (2023)Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability., , , , , , , , , and . IRPS, page 1-6. IEEE, (2023)FVLLMONTI: The 3D Neural Network Compute Cube $(N^2C^2)$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation., , , , , , , , , and 25 other author(s). DATE, page 1-6. IEEE, (2024)Energy-efficient Computation-In-Memory Architecture using Emerging Technologies., , , , , , , , , and 2 other author(s). ICM, page 325-334. IEEE, (2023)Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells., , , , , , , , , and 4 other author(s). J. Parallel Distributed Comput., 74 (6): 2484-2496 (2014)1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing., , , , , , , , , and 10 other author(s). IMW, page 1-4. IEEE, (2022)Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization., , , , , , , , , and 4 other author(s). IRPS, page 1-6. IEEE, (2021)High temperature stability embedded ReRAM for 2x nm node and beyond., , , , , , , , , and 9 other author(s). IMW, page 1-4. IEEE, (2022)