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5.6 Mb/mm2 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology.

, , , , , , and . IEEE J. Solid State Circuits, 52 (1): 229-239 (2017)

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