From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

A 32×24-bit multiplier-accumulator with advanced rectangular styled Wallace-tree structure., , , , , и . ISCAS (1), стр. 73-76. IEEE, (2005)Post-silicon programmed body-biasing platform suppressing device variability in 45 nm CMOS technology., , , , , и . ISLPED, стр. 15-20. ACM, (2008)A low power SRAM using auto-backgate-controlled MT-CMOS., , , , , , , и . ISLPED, стр. 293-298. ACM, (1998)Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability., , , , , , , , и . ICCAD, стр. 398-405. IEEE Computer Society, (2005)The LSI implementation of a memory based field programmable device for MCU peripherals., , , , , , и . DDECS, стр. 183-188. IEEE Computer Society, (2014)Stable adiabatic circuit using advanced series capacitors and time variation of energy dissipation., , , , и . IEICE Electron. Express, 7 (9): 640-646 (2010)General Stability of Stepwise Waveform of an Adiabatic Charge Recycling Circuit With Any Circuit Topology., , , , , и . IEEE Trans. Circuits Syst. I Regul. Pap., 59-I (10): 2301-2314 (2012)A Floating Point Divider using Redundant Binary Circuits and an Asynchronous Clock Scheme., , , и . ICCD, стр. 685-689. IEEE Computer Society, (1997)Energy dissipation reduction during adiabatic charging and discharging with controlled inductor current., , , , и . MWSCAS, стр. 1068-1071. IEEE, (2012)A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations., , , , , , , , , и 6 other автор(ы). IEEE J. Solid State Circuits, 43 (1): 180-191 (2008)