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Physical modeling of the hysteresis in M0S2 transistors.

, , , , , , , , , и . ESSDERC, стр. 284-287. IEEE, (2017)

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Andreas Jechow

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Thomas Jechle

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Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network., , , , , и . ESSDERC, стр. 243-246. IEEE, (2021)Physical modeling of the hysteresis in M0S2 transistors., , , , , , , , , и . ESSDERC, стр. 284-287. IEEE, (2017)Comphy - A compact-physics framework for unified modeling of BTI., , , , , , , , , и 4 other автор(ы). Microelectron. Reliab., (2018)Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors., , , , , , , , , и 2 other автор(ы). IRPS, стр. 6. IEEE, (2022)A Compact Physics Analytical Model for Hot-Carrier Degradation., , , , , , , , и . IRPS, стр. 1-7. IEEE, (2020)Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface., , , , , и . ESSDERC, стр. 235-238. IEEE, (2021)Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities., , , , , , и . ESSDERC, стр. 376-379. IEEE, (2022)Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide., , , , и . ESSDERC, стр. 239-242. IEEE, (2021)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 262-265. IEEE, (2019)