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Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register., , , and . ESSDERC, page 311-314. IEEE, (2016)Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins., , , and . LSSC, volume 7116 of Lecture Notes in Computer Science, page 630-637. Springer, (2011)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors., , , , , , , , and . IRPS, page 11. IEEE, (2022)Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations., , and . NMA, volume 6046 of Lecture Notes in Computer Science, page 87-94. Springer, (2010)Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM., , , , , , and . ESSDERC, page 146-149. IEEE, (2019)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2019)