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Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures., , , , , , , , , and . IRPS, page 1-6. IEEE, (2020)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2019)On the impact of mechanical stress on gate oxide trapping., , , , , , , , and . IRPS, page 1-5. IEEE, (2020)On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors., , , , , , , , and . IRPS, page 11. IEEE, (2022)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , and 2 other author(s). IRPS, page 10. IEEE, (2022)Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress., , , , , , , , , and 1 other author(s). IRPS, page 10. IEEE, (2022)Scalable 1.4 μW cryo-CMOS SP4T multiplexer operating at 10 mK for high-fidelity superconducting qubit measurements., , , , , , , , , and 7 other author(s). VLSI Technology and Circuits, page 230-231. IEEE, (2022)Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications., , , , , , and . IRPS, page 1-7. IEEE, (2024)Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics., , , , , , , , and . IRPS, page 4. IEEE, (2022)A Compact Physics Analytical Model for Hot-Carrier Degradation., , , , , , , , and . IRPS, page 1-7. IEEE, (2020)