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NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , and . IRPS, page 2. IEEE, (2015)Editorial., and . Microelectron. Reliab., 47 (6): 839-840 (2007)Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate., , , , and . Microelectron. Reliab., 49 (9-11): 998-1002 (2009)A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors., , and . Facing the Multicore-Challenge, volume 7174 of Lecture Notes in Computer Science, page 147-157. Springer, (2011)Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs., , , , , and . IRPS, page 3. IEEE, (2022)Characterization and modeling of reliability issues in nanoscale devices., , , and . ISCAS, page 2445-2448. IEEE, (2015)Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2019)Neural Network with Optical Frequency-Coded ReLU., , , , , and . OFC, page 1-3. IEEE, (2024)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors., , , , , , , and . IRPS, page 2. IEEE, (2015)Non-parabolic macroscopic transport models for semiconductor device simulation. Physica A: Statistical Mechanics and its Applications, 349 (1-2): 221--258 (Apr 1, 2005)