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Impact of field cycling on HfO2 based non-volatile memory devices.

, , , , , , , , , , , , , , , , , , , и . ESSDERC, стр. 364-368. IEEE, (2016)

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Uwe Schroeder

Uwe Schroeder

Uwe Schroeder

Uwe Schroeder

Uwe Schroeder

 

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Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , и . ESSDERC, стр. 160-163. IEEE, (2017)Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories., , , , , , и . DRC, стр. 207-208. IEEE, (2019)Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields., , , , , и . NVMTS, стр. 1-8. IEEE, (2019)Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide., , и . DRC, стр. 1-2. IEEE, (2022)Embedding hafnium oxide based FeFETs in the memory landscape., , и . ICICDT, стр. 121-124. IEEE, (2018)Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories., , , , , и . IRPS, стр. 1-6. IEEE, (2021)High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application., , , , , , , , , и 5 other автор(ы). IMW, стр. 1-3. IEEE, (2021)Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications., , , , , , , , и . ESSDERC, стр. 369-372. IEEE, (2016)Impact of field cycling on HfO2 based non-volatile memory devices., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 364-368. IEEE, (2016)Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM., , , , , и . NVMTS, стр. 1-4. IEEE, (2017)