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Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide.

, , and . DRC, page 1-2. IEEE, (2022)

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A Reference-less Sense Amplifier to Sense pA Currents in Ferroelectric Tunnel Junction Memories., , and . MOCAST, page 1-4. IEEE, (2023)2021 Roadmap on Neuromorphic Computing and Engineering., , , , , , , , , and 46 other author(s). CoRR, (2021)On-chip READ and WRITE Circuits for Multi-bit Ferroelectric Tunnel Junction Memory., , , and . NorCAS, page 1-6. IEEE, (2024)Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory., , , , , , , , and . ESSDERC, page 118-121. IEEE, (2019)Roadmap to Neuromorphic Computing with Emerging Technologies., , , , , , , , , and 42 other author(s). CoRR, (2024)On the voltage scaling potential of SONOS non-volatile memory transistors., , , , , , , and . ESSDERC, page 118-121. IEEE, (2015)Stability analysis supports memristor circuit design., , , , and . ISCAS, page 1138-1141. IEEE, (2015)Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing., , , , and . ESSCIRC, page 137-140. IEEE, (2022)Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device., , , , , , and . ISCAS, page 1097-1101. IEEE, (2022)Domain Formation in Ferroelectric Negative Capacitance Devices., , and . DRC, page 1-2. IEEE, (2018)