From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , и . ESSDERC, стр. 160-163. IEEE, (2017)Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields., , , , , и . NVMTS, стр. 1-8. IEEE, (2019)Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories., , , , , , и . DRC, стр. 207-208. IEEE, (2019)HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C., , , , , , , , , и 2 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2024)Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide., , и . DRC, стр. 1-2. IEEE, (2022)Embedding hafnium oxide based FeFETs in the memory landscape., , и . ICICDT, стр. 121-124. IEEE, (2018)Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories., , , , , и . IRPS, стр. 1-6. IEEE, (2021)High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application., , , , , , , , , и 5 other автор(ы). IMW, стр. 1-3. IEEE, (2021)Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications., , , , , , , , и . ESSDERC, стр. 369-372. IEEE, (2016)Impact of field cycling on HfO2 based non-volatile memory devices., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 364-368. IEEE, (2016)