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ABACuS: All-Bank Activation Counters for Scalable and Low Overhead RowHammer Mitigation., , , , , , , , и . CoRR, (2023)Understanding Read Disturbance in High Bandwidth Memory: An Experimental Analysis of Real HBM2 DRAM Chips., , , , , , , , и . CoRR, (2023)Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions., , , , , , и . HPCA, стр. 560-577. IEEE, (2024)Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices., , , , , , , , , и . DSN, стр. 475-487. IEEE, (2022)Analysis of Distributed Optimization Algorithms on a Real Processing-In-Memory System., , , , , , , , и . CoRR, (2024)A Deeper Look into RowHammer's Sensitivities: Experimental Analysis of Real DRAM Chipsand Implications on Future Attacks and Defenses., , , , , , , , и . MICRO, стр. 1182-1197. ACM, (2021)Functionally-Complete Boolean Logic in Real DRAM Chips: Experimental Characterization and Analysis., , , , , , , , , и . HPCA, стр. 280-296. IEEE, (2024)An Experimental Analysis of RowHammer in HBM2 DRAM Chips., , , , , , , , и . DSN-S, стр. 151-156. IEEE, (2023)CLR-DRAM: A Low-Cost DRAM Architecture Enabling Dynamic Capacity-Latency Trade-Off., , , , , , , и . ISCA, стр. 666-679. IEEE, (2020)HiRA: Hidden Row Activation for Reducing Refresh Latency of Off-the-Shelf DRAM Chips., , , , , , , и . MICRO, стр. 815-834. IEEE, (2022)