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Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament., , , , , , and . NVMTS, page 1-5. IEEE, (2017)Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM., , , , , and . ESSDERC, page 114-117. IEEE, (2015)Doped GeSe materials for selector applications., , , , , , , , , and 1 other author(s). ESSDERC, page 168-171. IEEE, (2017)Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability., , , , , , , , , and 2 other author(s). IMW, page 1-4. IEEE, (2021)Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process., , , , , , , , , and 5 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2021)Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current., , , , , , and . ESSDERC, page 262-265. IEEE, (2015)Conductive filaments multiplicity as a variability factor in CBRAM., , , , , , and . IRPS, page 11. IEEE, (2015)