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Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets., , , , , , , , , и 14 other автор(ы). VLSI Technology and Circuits, стр. 397-398. IEEE, (2022)Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling., , , , , , , , , и 17 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)A wall climbing robot with closed link mechanism., , , , и . IROS, стр. 2006-2011. IEEE, (2000)A New Concept of Safety Affordance Map for Robots Object Manipulation., , и . RO-MAN, стр. 565-570. IEEE, (2018)Enhancing EM Reliability and Lifetime Modeling: A Multi-Link Structure Approach., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-4. IEEE, (2024)A Comprehensive Hot Carrier Injection with Voltage Ramp Stress (HCI-VRS) through Different Model Verification for More than Moore Diversity Application., , , и . IRPS, стр. 1-4. IEEE, (2024)External Optical Modulator Using a Low-Cost Fabry-Perot Laser Diode for Optical Access Networks., , , и . OpNeTec, том 164 из IFIP International Federation for Information Processing, стр. 459-465. Springer, (2004)The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs., , , , , , , и . IRPS, стр. 4. IEEE, (2018)High Speed Receiver for Capsule Endoscope., , , , , , , , и . J. Medical Syst., 34 (5): 843-847 (2010)Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM., , , , , , , , , и 10 other автор(ы). IRPS, стр. 1-5. IEEE, (2023)