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15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.

J. Chang, Y. Chen, G. Chan, H. Cheng, P. Wang, Y. Lin, H. Fujiwara, R. Lee, H. Liao, P. Wang, G. Yeap, and Q. Li. ISSCC, page 238-240. IEEE, (2020)

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Rudolf Hank

Petra Hank

Dietrich Hank

Manfred Hank

Karsten Hank

Other publications of authors with the same name

12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications.M. Clinton, H. Cheng, H. Liao, R. Lee, C. Wu, J. Yang, H. Hsieh, F. Wu, J. Yang, A. Katoch and 4 other author(s). ISSCC, page 210-211. IEEE, (2017)A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.J. Chang, Y. Chen, H. Cheng, W. Chan, H. Liao, Q. Li, S. Chang, S. Natarajan, R. Lee, P. Wang and 5 other author(s). ISSCC, page 316-317. IEEE, (2013)12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.J. Chang, Y. Chen, W. Chan, S. Singh, H. Cheng, H. Fujiwara, J. Lin, K. Lin, J. Hung, R. Lee and 6 other author(s). ISSCC, page 206-207. IEEE, (2017)15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.J. Chang, Y. Chen, G. Chan, H. Cheng, P. Wang, Y. Lin, H. Fujiwara, R. Lee, H. Liao, P. Wang and 2 other author(s). ISSCC, page 238-240. IEEE, (2020)

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Disambiguation of "Cheng, Hank"