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15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.

J. Chang, Y. Chen, G. Chan, H. Cheng, P. Wang, Y. Lin, H. Fujiwara, R. Lee, H. Liao, P. Wang, G. Yeap, and Q. Li. ISSCC, page 238-240. IEEE, (2020)

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Vincent Robin

Claus Robinski

Nehemia Robinson

Meinhard Robinow

Yohan Robinson

Other publications of authors with the same name

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.J. Chang, Y. Chen, H. Cheng, W. Chan, H. Liao, Q. Li, S. Chang, S. Natarajan, R. Lee, P. Wang and 5 other author(s). ISSCC, page 316-317. IEEE, (2013)A 28nm high-k metal-gate SRAM with Asynchronous Cross-Couple Read Assist (AC2RA) circuitry achieving 3x reduction on speed variation for single ended arrays.R. Lee, J. Yang, C. Huang, C. Chiu, W. Kao, H. Cheng, H. Liao, and J. Chang. VLSIC, page 64-65. IEEE, (2012)A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications.J. Chang, Y. Chen, G. Chan, K. Lin, P. Wang, Y. Lin, S. Chen, P. Lin, C. Wu, C. Lin and 8 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.J. Chang, Y. Chen, G. Chan, H. Cheng, P. Wang, Y. Lin, H. Fujiwara, R. Lee, H. Liao, P. Wang and 2 other author(s). ISSCC, page 238-240. IEEE, (2020)A configurable 2-in-1 SRAM compiler with constant-negative-level write driver for low Vmin in 16nm Fin-FET CMOS.C. Wu, M. Chang, C. Chen, R. Lee, H. Liao, and J. Chang. A-SSCC, page 145-148. IEEE, (2014)12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications.M. Clinton, H. Cheng, H. Liao, R. Lee, C. Wu, J. Yang, H. Hsieh, F. Wu, J. Yang, A. Katoch and 4 other author(s). ISSCC, page 210-211. IEEE, (2017)12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.J. Chang, Y. Chen, W. Chan, S. Singh, H. Cheng, H. Fujiwara, J. Lin, K. Lin, J. Hung, R. Lee and 6 other author(s). ISSCC, page 206-207. IEEE, (2017)Evaluation of Parallel Tempering to Accelerate Bayesian Parameter Estimation in Systems Biology.S. Gupta, L. Hainsworth, J. Hogg, R. Lee, and J. Faeder. PDP, page 690-697. IEEE Computer Society, (2018)Signalling Preferences in Interviewing Markets.R. Lee, and M. Schwarz. Computational Social Systems and the Internet, volume 07271 of Dagstuhl Seminar Proceedings, Internationales Begegnungs- und Forschungszentrum fuer Informatik (IBFI), Schloss Dagstuhl, Germany, (2007)Technical Terminology in Asian Languages: Different Approaches to Adopting Engineering Terms.M. Matsuda, T. Takahashi, H. Goto, Y. Hayase, R. Nagano, and Y. Mikami. ALR@IJCNLP, page 25-32. Asian Federation of Natural Language Processing, (2008)

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