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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

, , , , , , , , , и . IRPS, стр. 1-8. IEEE, (2023)

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Etienne Moussay

Etienne Auger

Etienne Brosse

Etienne Herzog

Etienne Kaboré

 

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