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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

, , , , , , , , , и . IRPS, стр. 1-8. IEEE, (2023)

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Edda Jaud

Dieter Jaud

Dieter Jaud

Werner Jaud

Ralph Jaud

 

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A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , и . IRPS, стр. 4. IEEE, (2018)Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)., , , , , , , , , и . IRPS, стр. 1-8. IEEE, (2023)Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , и 2 other автор(ы). IRPS, стр. 1-6. IEEE, (2019)Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 295-298. IEEE, (2021)On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes., , , , , , , , , и . ESSDERC, стр. 126-129. IEEE, (2017)32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit., , , , , , , , , и 4 other автор(ы). ISCAS, стр. 1703-1706. IEEE, (2010)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2021)