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Disambiguation of "Vandendaele, William"

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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

, , , , , , , , , and . IRPS, page 1-8. IEEE, (2023)

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William Pierson

William Döhrmann

William Herz

William Cahill

William Jorns

 

Other publications of authors with the same name

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs., , , , , , , and . IRPS, page 1-6. IEEE, (2023)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface., , , , , , , , , and 5 other author(s). ESSDERC, page 295-298. IEEE, (2021)Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications., , , , , , , , , and 24 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2024)On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes., , , , , , , , , and . ESSDERC, page 126-129. IEEE, (2017)Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage., , , , , , , , , and . IRPS, page 10. IEEE, (2022)Study of forward AC stress degradation of GaN-on-Si Schottky diodes., , , , , , and . Microelectron. Reliab., (2018)A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , and . IRPS, page 4. IEEE, (2018)Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)., , , , , , , , , and . IRPS, page 1-8. IEEE, (2023)