( en | de | ru )

 

Disambiguation of "Lee, ?"

Author of the publication

copydeleteadd this publication to your clipboard
ESL learners' performance in error correction for writing: some implications for teaching

. System, 25 (4): 465--477 (1997)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Xavier Lee Lee

Bongsoo Lee

The role of negative regulators in coordination of the Myxococcus xanthus developmental program. Uni Marburg, (2009)

Min-Hi Lee

Induction and regulation of antiviral defence mechanisms through intracytoplasmic sensors. HU Berlin, (2009)

Clara Lee

Viktor Lee

 

Other publications of authors with the same name

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate., , , , , , , , , and 44 other author(s). ISSCC, page 236-237. IEEE, (2024)HyperCLOVA X Technical Report., , , , , , , , , and 90 other author(s). CoRR, (2024)4.3 A 43mm2 Fully Integrated Legacy Cellular and 5G FR1 RF Transceiver with 24RX/3TX Supporting Inter-Band 7CA/5CA 4×4 MIMO with 1K-QAM., , , , , , , , , and 26 other author(s). ISSCC, page 80-82. IEEE, (2024)Treat-to-Target or High-Intensity Statin in Patients With Coronary Artery Disease, , , , , , , , , and 62 other author(s). (2023)6.1 A Low-Power and Low-Cost 14nm FinFET RFIC Supporting Legacy Cellular and 5G FR1., , , , , , , , , and 13 other author(s). ISSCC, page 90-92. IEEE, (2021)A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization., , , , , , , , , and 39 other author(s). ISSCC, page 444-446. IEEE, (2022)A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface., , , , , , , , , and 34 other author(s). ISSCC, page 426-428. IEEE, (2021)The Physics of the B Factories, , , , , , , , , and 2024 other author(s). The European Physical Journal C, (Jul 8, 2014)22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST., , , , , , , , , and 27 other author(s). ISSCC, page 334-336. IEEE, (2020)A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization., , , , , , , , , and 29 other author(s). IEEE J. Solid State Circuits, 58 (1): 256-269 (2023)