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Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes.

, , , , , , , and . DRC, page 1-2. IEEE, (2023)

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Performance analysis and reliability characterization of non volatile memory cells with high efficiency.. University of Udine, Italy, (2006)Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies., , , , , and . CoRR, (2021)Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions., , , , , , , , , and 1 other author(s). ESSDERC, page 340-343. IEEE, (2022)Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions., , , , , , , , , and 2 other author(s). ESSDERC, page 255-258. IEEE, (2021)Modelling and design of FTJs as high reading-impedance synaptic devices., , , , , and . CoRR, (2021)Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes., , , , , , , and . DRC, page 1-2. IEEE, (2023)State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors., , , , , , , and . MIPRO, page 1-8. IEEE, (2015)Graphene base transistors with optimized emitter and dielectrics., , , and . MIPRO, page 33-38. IEEE, (2014)