From post

Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_on$ using Post-Metal Anneal.

, , , и . DRC, стр. 1-2. IEEE, (2023)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2., , , , , , , , , и . ESSDERC, стр. 1-4. IEEE, (2023)Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties., , , , , , , , , и . DRC, стр. 1-2. IEEE, (2022)Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry., , , , и . DRC, стр. 1-2. IEEE, (2018)Heat Generation and Transport in Nanometer-Scale Transistors., , и . Proc. IEEE, 94 (8): 1587-1601 (2006)Flexible Low-Power Superlattice-Like Phase Change Memory., , и . DRC, стр. 1. IEEE, (2020)A Novel ESD Clamp Based on the VO2 Insulator-Metal Transition., , , , , и . DRC, стр. 203-204. IEEE, (2019)Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers., , , , и . DRC, стр. 1-2. IEEE, (2022)A Systems Approach to Computing in Beyond CMOS Fabrics: Invited., , , , , , , , , и 2 other автор(ы). DAC, стр. 18:1-18:2. ACM, (2017)In Quest of the Next Information Processing Substrate: Extended Abstract: Invited., , , , , , , , , и 2 other автор(ы). DAC, стр. 17:1-17:6. ACM, (2017)Energy efficiency and conversion in 1D and 2D electronics., , , , , , , и . ESSDERC, стр. 35-37. IEEE, (2014)