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Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_on$ using Post-Metal Anneal.

M. Jaikissoon, J. Ko, E. Pop, and K. Saraswat. DRC, page 1-2. IEEE, (2023)

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Krishna Saxena

Krishna-K

Krishna Moorthi

Krishna Zivraj

Krishna Narasimhan

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Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_on$ using Post-Metal Anneal.M. Jaikissoon, J. Ko, E. Pop, and K. Saraswat. DRC, page 1-2. IEEE, (2023)Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2.J. Ko, Z. Zhang, S. Lee, M. Jaikissoon, R. Bennett, K. Kim, A. Kummel, P. Bandaru, E. Pop, and K. Saraswat. ESSDERC, page 1-4. IEEE, (2023)3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation.J. Suh, A. Meng, M. Jaikissoon, M. Braun, T. Kim, A. Marshall, A. Pakzad, P. McIntyre, and K. Saraswat. DRC, page 249-250. IEEE, (2019)Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties.L. Hoang, A. Daus, S. Wahid, J. Kwon, J. Ko, S. Qin, M. Islam, K. Saraswat, H. Wong, and E. Pop. DRC, page 1-2. IEEE, (2022)Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers.M. Jaikissoon, J. Yang, K. Neilson, E. Pop, and K. Saraswat. DRC, page 1-2. IEEE, (2022)Reliability Studies on Multilevel Interconnection with Intermetal Dielectric Air Gaps.V. Sukharev, B. Shieh, R. Choudhury, C. Park, and K. Saraswat. Microelectron. Reliab., 41 (9-10): 1631-1635 (2001)First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation.S. Wahid, A. Daus, J. Kwon, S. Qin, J. Ko, K. Saraswat, H. Wong, and E. Pop. DRC, page 1-2. IEEE, (2022)

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Disambiguation of "Saraswat, Krishna C."

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Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_on$ using Post-Metal Anneal.

Please choose a person to relate this publication to

Krishna Saxena

Krishna-K

Krishna Moorthi

Krishna Zivraj

Krishna Narasimhan

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Saraswat, Krishna C."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_on$ using Post-Metal Anneal.

Please choose a person to relate this publication to

Krishna Saxena

Krishna-K

Krishna Moorthi

Krishna Zivraj

Krishna Narasimhan

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_on$ using Post-Metal Anneal.