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Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI., , , , , , , , и . ESSDERC, стр. 138-141. IEEE, (2018)One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 25-28. IEEE, (2023)A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory., , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2024)Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning., , , и . IRPS, стр. 1-6. IEEE, (2020)Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication., , , , , , , , , и . VLSI Circuits, стр. 188-. IEEE, (2019)Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-5. IEEE, (2023)Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory., , , , , , , , и . IRPS, стр. 6. IEEE, (2018)