Author of the publication

Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics.

, , , , , , , , , , and . IRPS, page 1-5. IEEE, (2023)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI., , , , , , , , and . ESSDERC, page 138-141. IEEE, (2018)Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning., , , and . IRPS, page 1-6. IEEE, (2020)One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond., , , , , , , , , and 2 other author(s). ESSDERC, page 25-28. IEEE, (2023)A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory., , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2024)Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication., , , , , , , , , and . VLSI Circuits, page 188-. IEEE, (2019)Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics., , , , , , , , , and 1 other author(s). IRPS, page 1-5. IEEE, (2023)Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory., , , , , , , , and . IRPS, page 6. IEEE, (2018)