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Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI., , , , , , , , и . ESSDERC, стр. 138-141. IEEE, (2018)Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V., , , , , и . IRPS, стр. 1-7. IEEE, (2023)Emerging nanoscale silicon devices taking advantage of nanostructure physics., , и . IBM J. Res. Dev., 50 (4-5): 411-418 (2006)Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor., , и . IRPS, стр. 5. IEEE, (2018)A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory., , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2024)Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory., , , , , , , , и . IRPS, стр. 6. IEEE, (2018)Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication., , , , , , , , , и . VLSI Circuits, стр. 188-. IEEE, (2019)New layout design methodology for monolithically integrated 3D CMOS logic circuits based on parasitics engineering., , и . ESSDERC, стр. 258-261. IEEE, (2015)Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-5. IEEE, (2023)Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning., , , и . IRPS, стр. 1-6. IEEE, (2020)