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A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM).

, , , and . IEEE Trans. Very Large Scale Integr. Syst., 20 (1): 181-186 (2012)

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STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 22 (7): 1630-1634 (2014)A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop., , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 20 (11): 2044-2053 (2012)A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)., , , and . IEEE Trans. Very Large Scale Integr. Syst., 20 (1): 181-186 (2012)A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 64-II (6): 700-704 (2017)Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (12): 3376-3385 (2014)A Split-Path Sensing Circuit for Spin Torque Transfer MRAM., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 61-II (3): 193-197 (2014)Area-optimal sensing circuit designs in deep submicrometer STT-RAM., , , , and . ISCAS, page 1246-1249. IEEE, (2016)Reference-circuit analysis for high-bandwidth spin transfer torque random access memory., , , , and . ISLPED, page 365-370. IEEE, (2015)Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS., , , , and . IEEE J. Solid State Circuits, 52 (2): 496-504 (2017)An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 22 (7): 1620-1624 (2014)