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Disambiguation of "Kang, Seung-Hyuk"

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Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM.

, , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (12): 3376-3385 (2014)

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Jung-Hun Seung

Young-Hyuk Joo

Hyuk-Cheol Kwon

Woo-Hyuk Byun

Min-Hyuk Kim

 

Other publications of authors with the same name

STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 22 (7): 1630-1634 (2014)A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 64-II (6): 700-704 (2017)Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (12): 3376-3385 (2014)A Split-Path Sensing Circuit for Spin Torque Transfer MRAM., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 61-II (3): 193-197 (2014)A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)., , , and . IEEE Trans. Very Large Scale Integr. Syst., 20 (1): 181-186 (2012)A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop., , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 20 (11): 2044-2053 (2012)Area-optimal sensing circuit designs in deep submicrometer STT-RAM., , , , and . ISCAS, page 1246-1249. IEEE, (2016)Reference-circuit analysis for high-bandwidth spin transfer torque random access memory., , , , and . ISLPED, page 365-370. IEEE, (2015)Sensing margin trend with technology scaling in MRAM., , , , and . I. J. Circuit Theory and Applications, 39 (3): 313-325 (2011)A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 62-II (12): 1109-1113 (2015)